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| Bulletin I0139J 01/00 IR207DM..CCB Series STANDARD RECOVERY DIODES Junction Size: Wafer Size: V RRM Class: Passivation Process: Rectangular 207 x 157 mils 4" 800 and 1200 V Glassivated MOAT Reference IR Packaged Part: 20ETS Series Major Ratings and Characteristics Parameters VFM V RRM Maximum Forward Voltage Reverse Breakdown Voltage Range Units 1100 mV 800 and 1200 V Test Conditions T J = Amb., IF = 20 A TJ = Amb., IRRM = 100 A (1) (1) Nitrogen flow on die edge. Mechanical Characteristics Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Maximum Width of Sawing Line Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Cr - Ni - Ag (1 KA - 4 KA - 6 KA) 100% Al, (20 m) 207 x 157 mils (see drawing) 100 mm, with std. < 110 > flat 300 m 45 m 0.25 mm diameter minimum See drawing Storage in original container, in dessicated nitrogen, with no contamination www.irf.com 1 IR207DM..CCB Series Bulletin I0139J 01/00 Ordering Information Table Device Code IR 1 1 2 3 4 5 6 7 International Rectifier Device Chip Dimension in Mils 207 2 D 3 M 4 12 5 C 6 CB 7 Type of Device: D = Wire Bondable Standard Recovery Diode Passivation Process: M = Glassivated MOAT Voltage code: Code x 100 = V RRM Metallization: C = Aluminium (Anode) - Silver (Cathode) CB = Probed Uncut Die (wafer in box) None = Probed Die in chip carrier Available Class 08 = 800 V 12 = 1200 V Outline Table All dimensions are in millimeters 2 www.irf.com IR207DM..CCB Series Bulletin I0139J 01/00 Wafer Layout TOP VIEW N 304 Basic Cells All dimensions are in millimeters www.irf.com 3 |
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